Etch rate of graphene with and without protective layer in plasma environments

Introduction

Graphene is a mechanically strong and optically transparent material suited for fabricating freestanding conductive see-through membranes for numerous applications such as filtration, sensor and optic applications. The challenge of graphene is to make it more chemical resistive, especially during plasma treatments. This could increase the lifetime of the graphene for several applications such as EUV optics, see also: https://doi.org/10.3990/1.9789036546577 and https://doi.org/10.1117/12.2280560.

Assignment

  • Characterize the etching process of multi-layer graphene in harsh reactive environments such as H2 and O2 plasma as function of process power and time
  • Investigate to what extent a protective layer increases the chemical resistivity of graphene for these reactive plasma treatments
  • Work in the Nanolab cleanroom: attend necessary introductions/courses to work with plasma systems
  • Literature study on the chemistry of graphene surfaces which could lead to etching
  • Compose a project plan of the proposed research
  • Perform reactive plasma exposure test to graphene with and without protective layer
  • Characterize this etching process in terms of etch rate
  • Write a concise report with your findings

Contact: Wesley van den Beld, w.t.e.vandenbeld@utwente.nl , or contact prof.dr.Marcelo Ackermann.

Laboratory X-ray characterization tools and algorithms for thin films, multilayer structures and nano-patterns

Objective:

This assignment provides a possibility to experimentally study the thermodynamics-induced changes in ultra-thin layer using advances X-ray analysis. This assignment will help you to develop the experience with thin-film growth, advanced approached to characterization of thin films and thermodynamics.

Background:

During recent studies of Y oxide resistance to hydrogen radicals at 700°C is was found that Y oxide deposited by magnetron sputtering reacts with the SiO2 substrate forming an intermediate layer. Moreover, it was shown that during thermal annealing at 900 °C this intermixing continues and results in the formation of complex element distribution. From the first estimation, this intermixing makes Y oxide undesirable material for pellicle applications.

The goal of the project is to study the interaction of Y oxide (and, possibly, other similar d-metal oxides, like Sc oxide) with Si-containing substrates (different SiO2 and Si structures, and silicides) determine the structure of the interface and film. The analysis of interfaces in such thin films requires accurate and advanced utilization of nano-metrology. This analysis will be carried out using developed at XUV the free-form X-ray reflectivity analysis and supported by X-ray photo-electron spectroscopy, X-ray diffraction and other available techniques. After that, the first conclusions can be drawn about the potential of this material as a cap layer for the pellicle. Further on oxide films with different thicknesses will be exposed to atomic hydrogen to check if the stability of the layer depends on its thickness. In the case of very thin films that are strongly preferred for pellicle cap the stability of the material might be lower due to the presence of Si atoms on the surface.

Requirements to the candidate:

This assignment can be tailored for MSc programs of UT or Saxion with various ratios  between physics and engineering focuses of research. For any questions please contact dr. Roman Pushkarev (r.pushkarev@utwente.nl), or contact prof.dr.Marcelo Ackermann.

Metal oxides interaction with Si-containing substrates for pellicle application

Objective:

This assignment provides a possibility to experimentally study the thermodynamics-induced changes in ultra-thin layer using advances X-ray analysis. This assignment will help you to develop the experience with thin-film growth, advanced approached to characterization of thin films and thermodynamics.

Background:

During recent studies of Y oxide resistance to hydrogen radicals at 700°C is was found that Y oxide deposited by magnetron sputtering reacts with the SiO2 substrate forming an intermediate layer. Moreover, it was shown that during thermal annealing at 900 °C this intermixing continues and results in the formation of complex element distribution. From the first estimation, this intermixing makes Y oxide undesirable material for pellicle applications.

The goal of the project is to study the interaction of Y oxide (and, possibly, other similar d-metal oxides, like Sc oxide) with Si-containing substrates (different SiO2 and Si structures, and silicides) determine the structure of the interface and film. The analysis of interfaces in such thin films requires accurate and advanced utilization of nano-metrology. This analysis will be carried out using developed at XUV the free-form X-ray reflectivity analysis and supported by X-ray photo-electron spectroscopy, X-ray diffraction and other available techniques. After that, the first conclusions can be drawn about the potential of this material as a cap layer for the pellicle. Further on oxide films with different thicknesses will be exposed to atomic hydrogen to check if the stability of the layer depends on its thickness. In the case of very thin films that are strongly preferred for pellicle cap the stability of the material might be lower due to the presence of Si atoms on the surface.

Requirements to the candidate:

This assignment can be tailored for MSc programs of UT or Saxion with various ratios between physics and engineering focuses of research. For any questions please contact dr. Roman Pushkarev (r.pushkarev@utwente.nl), or contact prof.dr.Marcelo Ackermann.

Bij deze test baan moet je testen